EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.
|Published (Last):||5 December 2011|
|PDF File Size:||9.12 Mb|
|ePub File Size:||14.31 Mb|
|Price:||Free* [*Free Regsitration Required]|
These are shown in Table I. This exposure discharges the floating gate to its initial state through induced photo current.
IC Datasheet: EPROM – 1 : Free Download, Borrow, and Streaming : Internet Archive
Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem. The table of “Electrical Characteristics” provides conditions for actual device operation. All similar inputs of the MME may be par- alleled. When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring.
Capacitance Is guaranteed by periodic testing. An erasure system should be calibrated periodically. The distance from lamp to unit should be maintained at 1 inch. Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current.
The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time. The programming sequence is: Extended expo- sure to room level fluorescent lighting will also cause erasure. All bits will be at a “1” level output high in this initial state and after any full erasure. Table II shows the 3 programming modes. All input voltage levels, including the program pulse on chip-enable are TTL compatible.
The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. An opaque coating paint, tape, label, etc. A new pattern can then be written into the device by following the programming procedure.
Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. In- complete erasure will cause symptoms that can be misleading.
No pins should be left open.
EPROM Technical Data
Transition times S 20 ns unless noted otherwise. Full text of ” IC Datasheet: After the address and data signals are stable the program pin is pulsed from VI L to Dataasheet with a pulse width between 45 ms and 55 ms. This is done 8 bits a byte at a time.
Search the history of over billion web pages on the Internet. The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.
It is recommended that the MME be kept out of direct sunlight. Multiple pulses are not needed but will not cause device damage. The MME is packaged in a pin dual-in-line package with transparent lid.
Any individual address, a sequence of addresses, or addresses chosen at random may be programmed. MMES may be programmed in parallel with the same data in this mode.
Lamps lose intensity as they age. To prevent damage the device it must not be inserted into a board with power applied.
2716 – 2716 16K EPROM Datasheet
Adtasheet Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.
Typical conditions are for operation at: Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in fatasheet timing diagram or by reading all of the words out at the end of the programming sequence.
Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits.