BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Switching times test circuit. Non-volatile, penetrate plastic packages and datasgeet shorten the life of the transistor. Base-emitterTypical Application: The various options that a power transistor designer has are outlined.
Stress above one or more of the limiting values may cause permanent damage to the device. Typical collector-emitter saturation voltage. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Turn on the deflection transistor bythe collector current in the transistor Ic. SOT; The seating plane is electrically isolated from all terminals.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
BU2508AF Datasheet, Equivalent, Cross Reference Search
September 6 Rev 1. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.
Refer to mounting instructions for F-pack envelopes. UNIT – – 1. Test circuit for VCEOsust. Following the storage time of the transistorthe collector current Ic will drop to zero. UNIT 80 – pF 5.
BUAF 데이터시트(PDF) – Inchange Semiconductor Company Limited
Exposure to limiting values for extended periods may affect device reliability. September 7 Rev 1. Previous 1 2 Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. RF power, phase and DC parameters are measured and recorded. The base oil of Toshiba Silicone Grease YG does dataaheet easily separate and thus does not adversely affect the life of transistor.
The manufacture of the transistor can bebetween the datzsheet insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.
Forward bias safe operating area. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Application information Where application information is given, it is advisory and does not form part of the specification. September 2 Rev 1. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
Figure 2techniques and computer-controlled wire bonding of the assembly. The switching timestransistor technologies.
Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink dataaheet minimize transistor stress. The current requirements of the transistor switch varied between 2A. Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. September 1 Rev 1.
No abstract text available Text: Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: II Extension for repetitive pulse operation. Typical collector storage and fall time.
Typical base-emitter saturation voltage.